Enhanced Goos-Hänchen Shift and Sensor Design Based on All-Dielectric Metasurface
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    Abstract:

    To address the technical bottlenecks of natural Goos-Hänchen (GH) shift, including small amplitude, weak signal intensity, and difficulties in detection and practical application, this study leverages the ultra-high Q-factor and strong light field localization characteristics of bound states in the continuum (BIC) and quasi-BIC. With silica as the substrate and hafnium dioxide rectangular nanorods as the core structure, a novel all-dielectric reflective BIC metasurface is proposed by embedding a hafnium dioxide thin film between the substrate and nanorods. Combined with numerical simulation and theoretical analysis, the Q-factor is calculated by fitting the reflection spectrum with the Fano formula, and the modulation laws of structural parameters and incident angle on resonance characteristics, reflection phase and Goos-Hänchen shift are systematically investigated. The results show that quasi-BIC with a high-quality factor can significantly enhance the GH shift, with the maximum GH shift reaching more than 400 times the resonant wavelength. The maximum GH shift exactly occurs at the reflection peak with unit reflectivity, which facilitates the detection of GH shift signals, and the corresponding refractive index sensing sensitivity reaches 3.58×106μm/RIU. This research realizes the giant enhancement and multi-dimensional modulation of the Goos-Hänchen shift, providing a new scheme for the practical application of micro-nano photonic devices such as ultra-sensitive refractive index sensors.

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History
  • Received:May 09,2026
  • Revised:May 28,2026
  • Adopted:June 09,2026
  • Online: July 23,2026
  • Published:
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